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| BC556 ... BC559 BC556 ... BC559 PNP Version 2006-05-31 Power dissipation - Verlustleistung CBE General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP 500 mW TO-92 (10D3) 0.18 g Plastic case Kunststoffgehause Weight approx. - Gewicht ca. 18 9 16 Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Mae [mm] Maximum ratings (TA = 25C) BC556 Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Group A DC current gain - Kollektor-Basis-Stromverhaltnis 2) - VCE = 5 V, - IC = 10 A - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 100 mA Small signal current gain Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage transfer ratio Spannungsruckwirkung hFE hFE hFE typ. 90 110 ... 220 typ. 120 E-B short B open E open C open - VCES - VCEO - VCBO - VEB0 Ptot - IC - ICM - IBM IEM Tj TS 80 V 65 V 80 V Grenzwerte (TA = 25C) BC557 50 V 45 V 50 V 5V 500 mW 1) 100 mA 200 mA 200 mA 200 mA -55...+150C -55...+150C Kennwerte (Tj = 25C) Group B typ. 150 200 ... 450 typ. 200 Group C typ. 270 420 ... 800 typ. 400 BC558/559 30 V 30 V 30 V h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz hfe hie hoe hre typ. 220 1.6 ... 4.5 k 18 < 30 S typ. 1.5*10-4 typ. 330 3.2 ...8.5 k 30 < 60 S typ. 2*10-4 typ. 600 6 ... 15 k 60 < 110 S typ. 3*10-4 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BC556 ... BC559 Characteristics (Tj = 25C) Min. Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 80 V, (B-E short) - VCE = 50 V, (B-E short) - VCE = 30 V, (B-E short) - VCE = 80 V, Tj = 125C, (B-E short) - VCE = 50 V, Tj = 125C, (B-E short) - VCE = 30 V, Tj = 125C, (B-E short) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RG = 2 k f = 1 kHz, f = 200 Hz BC556 ... BC558 BC559 F F RthA - - 2 dB 1 dB < 200 K/W 1) BC546 ... BC549 BC556A BC557A BC558A BC556B BC557B BC558B BC559B BC557C BC558C BC559C 10 dB 4 dB CEB0 - 10 pF - CCBO - 3.5 pF 6 pF fT - 150 MHz - - VBE - VBE 600 mV - 660 mV - 750 mV 800 mV BC546 BC547 BC548 / BC549 BC546 BC547 BC548 / BC549 - ICES - ICES - ICES - ICES - ICES - ICES - VCEsat - VCEsat - VBEsat - VBEsat - - - - - - - - - - 0.2 nA 0.2 nA 0.2 nA - - - 80 mV 250 mV 700 mV 900 mV 15 nA 15 nA 15 nA 4 A 4 A 4 A 300 mV 650 mV - - Kennwerte (Tj = 25C) Typ. Max. Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg 2) Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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